产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -60 V, 400 mW, -600 mA, 75 hFE, SOT-363
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.8 ohm, 13 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 0.0029 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6 A, 500 V, 0.76 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 30 V, 0.03 ohm, 10 V, 1.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.35 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V
(EN)
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 0.213 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18.5 A, 30 V, 0.0038 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0025 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 320 mA, 100 V, 4 ohm, 10 V, 2.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.031 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 67 A, 150 V, 0.009 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 280 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 124 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)DIODES INC.
单晶体管 双极, PNP, -45 V, 310 mW, -500 mA, 250 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE
(EN)
ON SEMICONDUCTOR
晶体管, JFET, -30 V, 1.2 mA, 3 mA, -2.2 V, SOT-23, JFET
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 870 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -50 V, 40 MHz, 225 mW, -50 mA, 40 hFE
(EN)
