产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.063 ohm, -4.5 V, -1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.3 A, -60 V, 250 mohm, -10 V, -1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 45 V, 200 MHz, 625 mW, 800 mA, 400 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 750 mA, 30 V, 0.25 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
(EN)
NXP
二极管, 射频/PIN, 单, 0.7 ohm, 175 V, SOD-523, 2引脚, 0.35 pF
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.054 ohm, -4.5 V, -900 mV
(EN)
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.213 电阻比率
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0073 ohm, -4.5 V, -1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 30 V, 100 MHz, 310 mW, 1 A, 300 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 180 MHz, 390 mW, 2.6 A, 500 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, 40 V, 200 MHz, 300 mW, 2 A, 450 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 40 V, 7.8 mohm, 10 V, 1.2 V
(EN)
DIODES INC.
单晶体管 双极, NPN, PNP, 45 V, 300 MHz, 200 mW, -100 mA, 290 hFE
(EN)NEXPERIA
双极晶体管阵列, 双PNP, -60 V, 250 mW, -500 mA, 2000 hFE, SOT-23
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 25 GHz, 160 mW, 35 mA, 95 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, PowerTrench, 双N沟道, 66 A, 80 V, 0.0033 ohm, 10 V, 3 V
(EN)
