产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 60 V, 100 MHz, 350 mW, 500 mA, 100 hFE
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 7 A, 30 V, 0.018 ohm, 10 V, 2.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 360 MHz, 900 mW, -3 A, 200 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 800 mA, 60 V, 0.3 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -150 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -50 V, 40 MHz, 350 mW, -100 mA, 250 hFE
(EN)
NEXPERIA
双极晶体管阵列, PNP, -45 V, 600 mW, -500 mA, 160 hFE, SOT-457
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.25 ohm, 10 V, 1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, AEC-Q101, 双PNP
(EN)
VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.0272 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 380 MHz, 900 mW, 3 A, 200 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V
(EN)DIODES INC.
单晶体管 双极, NPN, 30 V, 300 MHz, 300 mW, 100 mA, 330 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.2 A, -8 V, 0.02 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 100 mA, 50 V, 6 ohm, 4 V, 1.3 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
双路场效应管, MOSFET, 双N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 5 mohm, 4.5 V, 2.25 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
