产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0037 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 150 MHz, 390 mW, -2.7 A, 300 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00048 ohm, 10 V, 2.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -860 mA, -20 V, 120 mohm, -4.5 V, -1 V
(EN)ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 25 A, 600 V, 0.117 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 2.3 V, 65 GHz, 185 mW, 80 mA, 110 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 80 V, 160 MHz, 625 mW, 1.5 A, 300 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 200 mW, -200 mA, 30 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 40 V, 270 MHz, 1.25 W, 3 A, 450 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -30 V, 5 mA, 30 mA, -3 V, SOT-23, JFET
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 50 V, 900 mW, 1 A, 200 hFE, SOT-25
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.062 ohm, -4.5 V, -1.01 V
(EN)ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 1 kohm, 10 kohm, 0.1 电阻比率
(EN)ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 电阻比率
(EN)NEXPERIA
单晶体管 双极, PNP, -20 V, 155 MHz, 390 mW, -3.5 A, 320 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 25 V, 300 MHz, 225 mW, 200 mA, 60 hFE
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.9 A, 20 V, 0.0146 ohm, 10 V, 2.5 V
(EN)
