ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 220 mA, 25 V, 4 ohm, 4.5 V, 850 mV
INFINEON
晶体管, MOSFET, N沟道, 45 A, 250 V, 0.042 ohm, 10 V, 5 V
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 60 V, 17500 μohm, 10 V, 2.5 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -50 V, 420 MHz, 900 mW, -1 A, 200 hFE
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V
BROADCOM LIMITED
晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 80 V, 0.0172 ohm, 10 V, 2.9 V
INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管 双极-射频, NPN, 12 V, 2 GHz, 225 mW, 50 mA, 25 hFE
DIODES INC.
晶体管, MOSFET, P沟道, -3.8 A, -30 V, 0.065 ohm, -10 V, -2.1 V
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.004 ohm, 4.5 V, 600 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 沟, N沟道, 6.1 A, 30 V, 0.026 ohm, 10 V, 1.8 V
NEXPERIA
单晶体管 双极, NPN, 40 V, 150 MHz, 1.1 W, 4 A, 300 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 50 V, 420 MHz, 900 mW, 1 A, 200 hFE
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
INFINEON
晶体管 双极-射频, NPN, 4.1 V, 42 GHz, 200 mW, 50 mA, 110 hFE
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 100 MHz, 540 mW, -2 A, 150 hFE
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0058 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.064 ohm, -4.5 V, -1.3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 13 mohm, -10 V, -1.4 V
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 12 V, 7 GHz, 800 mW, 150 mA, 100 hFE
ON SEMICONDUCTOR
晶体管, JFET, JFET, 30 V, 5 mA, 30 mA, -3 V, SOT-23, JFET