产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 110 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0053 ohm, 10 V, 1.9 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 100 V, 1 W, 800 mA, 10000 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 120 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -40 V, 110 MHz, 1.1 W, -4 A, 200 hFE
(EN)
INFINEON
晶体管 双极-射频, NPN, 4 V, 42 GHz, 500 mW, 150 mA, 110 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 0.0055 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 4 A, 60 V, 0.045 ohm, 10 V, 1.7 V
(EN)DIODES INC.
单晶体管 双极, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 520 hFE
(EN)
NEXPERIA
双极晶体管阵列, 双PNP, 30 V, 250 mW, -100 mA, 220 hFE, SOT-143B
(EN)
ROHM
晶体管, MOSFET, N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -45 V, 100 MHz, 310 mW, -800 mA, 170 hFE
(EN)ROHM
晶体管, MOSFET, P沟道, -250 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7.9 A, 650 V, 0.52 ohm, 10 V, 2 V
(EN)
NEXPERIA
双极晶体管阵列, NPN, 45 V, 390 mW, 100 mA, 290 hFE, SOT-143B
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 6 ohm, -10 V, -3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 5.6 A, 650 V, 0.755 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -13.2 A, -100 V, 0.119 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 10 V, 7 GHz, 150 mW, 70 mA, 60 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 10 V, 7 GHz, 200 mW, 70 mA, 60 hFE
(EN)NEXPERIA
晶体管 双极-射频, NPN, 60 V, 100 MHz, 250 mW, 100 mA, 450 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, PNP, -50 V, 390 MHz, 1.2 W, -3 A, 200 hFE
(EN)
