产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -830 mA, -20 V, 0.28 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13.5 A, -20 V, 8.5 mohm, -4.5 V, -600 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -200 mA, -20 V, 1 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 190 MHz, 325 mW, 1 A, 180 hFE
(EN)
NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 150 MHz, 250 mW, -100 mA, 100 hFE
(EN)
NEXPERIA
晶体管, MOSFET, D-MOS, P沟道, -210 mA, -300 V, 17 ohm, -10 V, -2.8 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 100 V, 175 MHz, 1.25 W, 2.5 A, 450 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 30 mohm, 10 V, 1 V
(EN)NEXPERIA
单晶体管 双极, NPN, 30 V, 125 MHz, 250 mW, 500 mA, 10000 hFE
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 W, 1.3 V, TO-252, 30 A
(EN)INFINEON
晶体管, MOSFET, N沟道, 63 A, 30 V, 0.0038 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.12 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管 双极-射频, NPN, 6 V, 14 GHz, 75 mW, 20 mA, 90 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 25 V, 150 MHz, 2 W, 3 A, 15 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 65 V, 300 MHz, 300 mW, 100 mA, 330 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.7 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
(EN)
