产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
双路场效应管, MOSFET, N和P, 5.1 A, 20 V, 0.041 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4 A, -30 V, 0.044 ohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0094 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.5 mohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.4 A, 20 V, 0.085 ohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 40 V, 7 mohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 1.9 A, 20 V, 0.069 ohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -4.5 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 270 A, 25 V, 0.0005 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 20 mohm, 10 V, 1 V
(EN)
NEXPERIA
双极晶体管阵列, 双NPN, 30 V, 250 mW, 500 mA, 4000 hFE, SOT-23
(EN)NEXPERIA
单晶体管 双极, 开关, NPN, 15 V, 500 MHz, 250 mW, 200 mA, 20 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 9.3 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -29 A, -30 V, 3.9 mohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 57 A, 30 V, 0.0048 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0008 ohm, 10 V, 1.6 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 4.2 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟, P沟道, -1.2 A, -20 V, 0.17 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, 沟, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)
