NEXPERIA
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
DIODES INC.
双极晶体管阵列, 通用, 双路, NPN, PNP, 30 V, 1.1 W, 1.5 A, 300 hFE, SOT-23
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
INFINEON
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0026 ohm, 10 V, 2.25 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.1 ohm, -10 V, -1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 2 V
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0029 ohm, 10 V, 2.4 V
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 30 V, 2 ohm, 4 V, 1 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 20 A, 20 V, 4.4 mohm, 10 V, 2 V
DIODES INC.
单晶体管 双极, NPN, 80 V, 100 MHz, 300 mW, 500 mA, 100 hFE
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 625 mW, 1 A, 35 hFE
NEXPERIA
单晶体管 双极, NPN, PNP, 60 V, 175 MHz, 2 W, 1 A, 70 hFE
INFINEON
晶体管, MOSFET, N沟道, 27 A, 20 V, 0.0019 ohm, 4.5 V, 1.1 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.2 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, P沟道, -9.2 A, -30 V, 0.0133 ohm, -20 V, -1.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0054 ohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, AEC-Q101, N沟道, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V
MULTICOMP
单晶体管 双极, NPN, 30 V, 100 MHz, 625 mW, 800 mA, 100 hFE
DIODES INC.
单晶体管 双极, NPN, 40 V, 300 mW, 600 mA, 100 hFE
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0101 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
NEXPERIA
单晶体管 双极, 双PNP, -40 V, 250 MHz, 240 mW, -200 mA, 100 hFE
INFINEON
晶体管, MOSFET, N沟道, 7 A, 60 V, 0.02 ohm, 10 V, 3 V