产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 295 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 450 mA, 60 V, 2 ohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.0047 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, 小信号, P沟道, -25 A, -30 V, 0.056 ohm, -5 V, -1.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -39.6 A, -30 V, 0.0135 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 0.012 ohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 220 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 3.6 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 30 V, 190 MHz, 325 mW, 2 A, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 30 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.033 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0022 ohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 40 V, 13 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 0.03 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.037 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 65 V, 200 mW, 100 mA, 110 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 170 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 295 mohm, -10 V, -4 V
(EN)
