NEXPERIA
单晶体管 双极, NPN, 40 V, 180 MHz, 250 mW, 100 mA, 100 hFE
NEXPERIA
单晶体管 双极, PNP, 45 V, 145 MHz, 500 mW, 1 A, 63 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.0077 ohm, -10 V, -1.9 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -3 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 50 V, 30 MHz, 350 mW, 100 mA, 200 hFE
INFINEON
晶体管, MOSFET, P沟道, -9.2 A, -30 V, 0.0156 ohm, -10 V, -1.8 V
NEXPERIA
晶体管 双极-射频, PNP, -32 V, 100 MHz, 250 mW, -100 mA, 630 hFE
INFINEON
晶体管, MOSFET, N沟道, 5 A, 30 V, 22 mohm, 4.5 V, 800 mV
INFINEON
晶体管, MOSFET, N沟道, 86 A, 30 V, 0.004 ohm, 10 V, 1.8 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
INFINEON
晶体管, MOSFET, N沟道, 180 A, 25 V, 0.0012 ohm, 10 V, 1.9 V
INFINEON
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.007 ohm, -4.5 V, -900 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.08 ohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0018 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道+肖特基, 160 A, 25 V, 0.0014 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 375 A, 40 V, 0.0007 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR
晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
VISHAY
晶体管, MOSFET, N沟道, 14 A, 20 V, 0.0041 ohm, 10 V, 2 V
VISHAY
晶体管, JFET, JFET, 30 V, -20 mA, -135 mA, 10 V, TO-236, JFET
VISHAY
晶体管, MOSFET, P沟道, -18.3 A, -60 V, 0.048 ohm, -10 V, -3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.8 A, -12 V, 0.097 ohm, -4.5 V, -650 mV
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV
INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 30 V, 0.017 ohm, 4.5 V, 1 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.0137 ohm, 10 V, 4 V