产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
(EN)
INFINEON
场效应管, MOSFET, 双路, N沟道, 20V, 0.88A, SOT-363-6
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 0.065 ohm, 10 V, -1.5 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 50 mohm, 10 V, 1 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 520 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.0144 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 600 mA, 60 V, 1.5 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.009 ohm, -10 V, -2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.0073 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 5.2 A, 20 V, 0.05 ohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 30 V, 0.0094 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0094 ohm, 10 V, 4.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 25 V, 0.01 ohm, 10 V, 1.8 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 8.2 A, -60 V, 85 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 80 V, 0.0115 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1.5 A, -40 V, 0.18 ohm, -10 V, -1.7 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0086 ohm, 10 V, 2.25 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
(EN)
