INFINEON
晶体管 双极-射频, NPN, 6 V, 14 GHz, 380 mW, 80 mA, 90 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 1 ohm, 10 V, 1.6 V
INFINEON
双路场效应管, MOSFET, 双P沟道, -9 A, -20 V, 0.018 ohm, -4.5 V, -1 V
MULTICOMP
单晶体管 双极, NPN, 30 V, 250 MHz, 625 mW, 100 mA, 500 hFE
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 300 mohm, -10 V, -2 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0033 ohm, 10 V, 2 V
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 29 mohm, 10 V, 4 V
VISHAY
晶体管, MOSFET, P沟道, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V
DIODES INC.
单晶体管 双极, PNP, -150 V, 300 MHz, 300 mW, -600 mA, 60 hFE
INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.014 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0016 ohm, 10 V, 2 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 80 V, 150 MHz, 225 mW, 500 mA, 150 hFE
VISHAY
晶体管, MOSFET, P沟道, -350 mA, -20 V, 0.8 ohm, -1.8 V, -450 mV
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -300 V, 50 MHz, 350 mW, -500 mA, 25 hFE
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 150 V, 0.068 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.013 ohm, 10 V, 1.7 V
NEXPERIA
晶体管, MOSFET, N沟道, 56 A, 60 V, 0.0103 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
单晶体管 双极, 双NPN, 45 V, 100 MHz, 380 mW, 100 mA, 270 hFE
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 100 V, 10 ohm, 10 V, 2.4 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV