产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, 通用, NPN, 160 V, 300 MHz, 250 mW, 300 mA, 80 hFE
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.0085 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 25 V, 0.0015 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 29 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0024 ohm, 10 V, 1 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 0.47 ohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.0062 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -100 V, 820 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.002 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 30 V, 0.00122 ohm, 10 V, 1.8 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 120 V, 0.0166 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 55 V, 0.039 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0026 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 46 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 40 V, 350 mW, 200 mA, 30 hFE, SOT-963
(EN)
NXP
晶体管, 射频FET, 7 V, 30 mA, 200 mW, 40 MHz, 3 GHz, SOT-143B
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 14.4 A, 100 V, 0.051 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.05 ohm, 10 V, 3 V
(EN)
