产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 7.6 A, 80 V, 0.0135 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0063 ohm, 10 V, 2.7 V
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 100 V, 0.02 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 25 V, 0.0027 ohm, 10 V, 2 V
(EN)
MULTICOMP
单晶体管 双极, PNP, -45 V, 260 MHz, 625 mW, -800 mA, 400 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 3.9 mohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0091 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 音频, PNP, 80 V, 90 MHz, 20 W, 8 A, 60 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11.3 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.035 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.093 ohm, 4.5 V, 1.3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.0095 ohm, 10 V, 1.7 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.007 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0027 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
(EN)
INFINEON
晶体管 双极-射频, 双NPN, 12 V, 8 GHz, 175 mW, 20 mA, 70 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 12 V, 8 GHz, 250 mW, 35 mA, 70 hFE
(EN)
