NXP
二极管, 射频/PIN, 单, 0.7 ohm, 175 V, SOD-323, 2引脚, 0.35 pF
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 4.7 kohm
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 25 V, 0.0038 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -12 V, 450 MHz, 600 mW, -1 A, 300 hFE
ON SEMICONDUCTOR
双极晶体管阵列, NPN, 40 V, 380 mW, 600 mA, 20 hFE, SC-74
INFINEON
晶体管, MOSFET, N沟道, 93 A, 20 V, 0.0045 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q100, 单路NPN, 50 V, 100 mA, 2.2 kohm, 4.7 kohm, 0.47 电阻比率
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 40 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 15 V, 330 MHz, 300 mW, 700 mA, 300 hFE
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 13 mohm, 10 V, 1.8 V
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 200 hFE
ON SEMICONDUCTOR
晶体管 双极-射频, NPN, 8 V, 13 GHz, 400 mW, 150 mA, 60 hFE
ON SEMICONDUCTOR
双极晶体管阵列, 双NPN, 45 V, 150 mW, 200 mA, 500 hFE, SC-88
VISHAY
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.00115 ohm, 10 V, 2.1 V
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 22 GHz, 230 mW, 70 mA, 90 hFE
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 2.5 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 4 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -30 V, 520 MHz, 700 mW, -700 mA, 200 hFE
VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.00115 ohm, 10 V, 2.1 V
INFINEON
二极管, 射频/PIN, 双共阴极, 1 ohm, 50 V, SOT-23, 3引脚, 0.3 pF