产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ROHM
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.0193 ohm, -10 V, -2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 9 A, 30 V, 0.0165 ohm, 10 V, 2.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 12 A, 200 V, 0.25 ohm, 10 V, 5.25 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)
MICREL SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1800 μohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 30 V, 1.6 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.07 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 625 mW, 300 mA, 200 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率
(EN)ROHM
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -1.3 A, -12 V, 0.19 ohm, -4.5 V, -1 V
(EN)INFINEON
单晶体管, IGBT, 50 A, 2.05 V, 326 W, 1.2 kV, TO-247, 3 引脚
(EN)
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 32 A, 1 kV, 0.32 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 650 mW, 1 A, 100 hFE
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.092 ohm, 10 V, 4 V
(EN)
