产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 420 mW, 1 A, 100 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -20 V, 140 MHz, 420 mW, -2 A, 100 hFE
(EN)NEXPERIA
单晶体管 双极, PNP, -20 V, 140 MHz, 420 mW, -2 A, 160 hFE
(EN)
NEXPERIA
双极晶体管阵列, 双PNP, -60 V, 510 mW, -1 A, 70 hFE, SOT-1118
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00326 ohm, 10 V, 1.73 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 61 A, 25 V, 0.00584 ohm, 10 V, 1.76 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.066 ohm, 4.5 V, 1.5 V
(EN)NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 420 mW, -1 A, 40 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 20 V, 170 MHz, 420 mW, 2 A, 40 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 420 mW, 1 A, 63 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 22 A, 500 V, 0.185 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V
(EN)NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 420 mW, 1 A, 100 hFE
(EN)NEXPERIA
双极晶体管阵列, 双NPN, 20 V, 510 mW, 2 A, 150 hFE, SOT-1118
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V
(EN)
DIODES INC.
单晶体管 双极, 高增益, NPN, 12 V, 260 MHz, 350 mW, 5 A, 800 hFE
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V
(EN)NEXPERIA
双极晶体管阵列, 双PNP, -60 V, 510 mW, -2 A, 50 hFE, SOT-1118
(EN)
NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -500 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
NEXPERIA
单晶体管 双极, PNP, -30 V, 165 MHz, 600 mW, -3 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 2.2 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 11.5 A, 3.01 V, 34 W, 600 V, TO-220FP, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 69 A, 100 V, 0.0099 ohm, 10 V, 1.84 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00182 ohm, 10 V, 1.68 V
(EN)
