产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 35 V, 0.03 ohm, 10 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双P沟道, -3.05 A, -30 V, 0.063 ohm, -10 V, -1.7 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 45 A, 30 V, 0.0039 ohm, 4.5 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 100 V, 20 W, 8 A, 300 hFE
(EN)
ON SEMICONDUCTOR
单晶体管, IGBT, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -12 V, 0.07 ohm, -1.8 V, -450 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, 50 hFE
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.1 A, 30 V, 0.044 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.095 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.025 ohm, 4.5 V, 670 mV
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 25 A, 100 V, 11 mohm, 10 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 0.03 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0063 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, 双PNP, -60 V, 125 MHz, 2 W, -1 A, 70 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V
(EN)
