NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
DIODES INC.
单晶体管 双极, PNP, -45 V, 100 MHz, 200 mW, -100 mA, 220 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 90 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 45 V, 225 mW, 500 mA, 40 hFE
NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 63 hFE
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.7 A, 20 V, 80 mohm, 4.5 V, 900 mV
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 50 mohm, -10 V, -1.7 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 25 mohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
INFINEON
单晶体管, IGBT, 10 A, 2.05 V, 110 W, 600 V, TO-263, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 79 mohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.85 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 150 mW, 600 mA, 35 hFE
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 250 MHz, 150 mW, 600 mA, 20 hFE
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, -1.6 V
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 4.7 kohm, 47 kohm
NEXPERIA
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm
NEXPERIA
单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 250 mW, 200 mA, 100 hFE