产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, PNP, -80 V, 200 MHz, 1.25 W, -1 A, 2000 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V
IXYS SEMICONDUCTOR
单晶体管, IGBT, 50 A, 2.96 V, 300 W, 1.2 kV, TO-268, 3 引脚
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.29 ohm, 8 V, 2.1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 7 A, 500 V, 1 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 19.8 A, 650 V, 0.157 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V
(EN)
ROHM
双极晶体管阵列, 双路, NPN, PNP, 50 V, 150 mW, 150 mA, 120 hFE, EMT
(EN)
ROHM
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 67 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.15 ohm, 10 V, 2.8 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 40 A, 1.2 kV, 0.08 ohm, 20 V, 2.6 V
(EN)DIODES INC.
单晶体管 双极, PNP, 30 V, 110 MHz, 1.6 W, 5.5 A, 225 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 225 mW, 100 mA, 420 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 2.2 kohm, 10 kohm
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 20 V, 0.013 ohm, 4.5 V, 800 mV
(EN)
INFINEON
单晶体管, IGBT, 40 A, 1.5 V, 166 W, 600 V, TO-247, 3 引脚
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 300 V, 50 MHz, 350 mW, 500 mA, 40 hFE
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 250 hFE
(EN)ROHM
单晶体管 双极, PNP, -80 V, 200 MHz, 10 W, -5 A, 120 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 225 mW, -100 mA, 220 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
(EN)
