产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ROHM
单晶体管 双极, NPN, 80 V, 200 MHz, 10 W, 5 A, 120 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.0019 ohm, 10 V, 1 V
(EN)INFINEON
单晶体管, IGBT, 15 A, 2.05 V, 130 W, 600 V, TO-263, 3 引脚
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 150 V, 32 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
单晶体管, IGBT, B3-Class, 75 A, 1.51 V, 540 W, 600 V, TO-247AD, 3 引脚
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.2 A, 500 V, 0.72 ohm, 10 V, 3.75 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 4.7 kohm
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 30 V, 100 MHz, 300 mW, 100 mA, 200 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.5 mohm, 8 V, 1.1 V
(EN)INFINEON
单晶体管, IGBT, 75 A, 1.75 V, 480 W, 1.2 kV, TO-247, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 8 A, 1.65 V, 62 W, 650 V, TO-252, 3 引脚
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.01 ohm, -10 V, -1.5 V
(EN)LITTELFUSE
晶闸管, 600 V, 75 μA, 2.6 A, 4 A, TO-252, 3 引脚
(EN)
ROHM
单晶体管 双极, 高速, NPN, 60 V, 300 MHz, 200 mW, 500 mA, 120 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 93 A, 30 V, 4.9 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 98 A, 500 V, 0.05 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 48 A, 650 V, 0.065 ohm, 10 V, 5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 7 A, 60 V, 0.033 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 250 mA, 60 V, 1.7 ohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
