产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.9 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.066 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 6.5 A, 60 V, 0.024 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -12 V, 0.024 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 650 V, 0.68 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 170 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 1 V
(EN)
NEXPERIA
双极晶体管阵列, 双PNP, -65 V, 220 mW, -100 mA, 110 hFE, SOT-363
(EN)
INFINEON
晶体管, MOSFET, BRT, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0018 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 22 A, 650 V, 0.145 ohm, 10 V, 5 V
(EN)
NEXPERIA
双极晶体管阵列, PNP, -20 V, 2.3 W, -6.3 A, 250 hFE, SOIC
(EN)
NEXPERIA
单晶体管 双极, NPN, 20 V, 260 MHz, 250 mW, 30 mA, 65 hFE
(EN)
MULTICOMP
单晶体管 双极, NPN, 80 V, 500 mW, 1 A, 250 hFE
(EN)NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 PNP, 50 V, -100 mA, 4.7 kohm
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0243 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)ROHM
单晶体管 双极, AEC-Q101, PNP, -50 V, 320 MHz, 2 W, -2 A, 180 hFE
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 16 A, 1.65 V, 94 W, 650 V, TO-263S, 3 引脚
(EN)
