产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ROHM
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.08 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 0.095 ohm, -10 V, -2.6 V
(EN)
ROHM
单晶体管 双极, PNP, -60 V, 400 MHz, 200 mW, -500 mA, 120 hFE
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 34 A, 650 V, 0.096 ohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.095 ohm, 4.5 V, 1.5 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 40 V, 145 MHz, 2.5 W, 3 A, 450 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0218 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 500 mW, 1 A, 63 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 3 V
(EN)INFINEON
单晶体管, IGBT, 80 A, 1.85 V, 305 W, 600 V, TO-247, 3 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.023 ohm, 10 V, 5 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
(EN)
INFINEON
单晶体管, IGBT, N通道, 6.3 A, 1.95 V, 35 W, 600 V, TO-252AA, 3 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 26 mohm, -4.5 V, -400 mV
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.36 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10.6 A, 60 V, 0.0094 ohm, 20 V, 3.2 V
(EN)INFINEON
单晶体管, IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 引脚
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 120 A, 650 V, 0.024 ohm, 10 V, 5 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 80 V, 125 MHz, 300 mW, 500 mA, 10000 hFE
(EN)ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.4 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.057 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 4.5 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)
