产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 160 W, -20 A, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 0.042 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 150 V, 180 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.001 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
单晶体管 双极, 达林顿, NPN, 60 V, 200 MHz, 1.25 W, 1 A, 2000 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 75 V, 3.4 mohm, 10 V, 2.3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 83.2 A, 650 V, 0.033 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 85 A, 1.6 V, 277 W, 650 V, TO-247N, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道+肖特基, 7.3 A, 30 V, 0.013 ohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 45 V, 0.018 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 500 mA, 160 hFE
(EN)
ROHM
晶体管, MOSFET, 低栅极阈值电压, N沟道, 4 A, 30 V, 66 mohm, 4.5 V, 1.5 V
(EN)ROHM
单晶体管 双极, PNP, -50 V, 140 MHz, 150 mW, -150 mA, 120 hFE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.00445 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 5.5 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 62 A, 650 V, 0.05 ohm, 10 V, 5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 200 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.0169 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -16 A, -45 V, 0.035 ohm, -10 V, -3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 7 A, 45 V, 0.018 ohm, 10 V, 2.5 V
(EN)
