产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 500 mA, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.018 ohm, 20 V, 1.6 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 225 mW, -500 mA, 50 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 mA, 20 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 460 mW, -500 mA, 40 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)INFINEON
晶体管 双极-射频, AEC-Q101, NPN, 12 V, 8 GHz, 175 mW, 20 mA, 100 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q100, 双路 PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -7 A, -30 V, 23 mohm, -10 V, -1.6 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 200 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
(EN)DIODES INC.
单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110 hFE
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 40 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.4 A, 20 V, 0.107 ohm, 2.5 V, 550 mV
(EN)
MULTICOMP
单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
(EN)NEXPERIA
单晶体管 双极, 通用, PNP, 30 V, 250 mW, 100 mA, 220 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7.3 A, -30 V, 0.026 ohm, -10 V, 1.5 V
(EN)
