产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, 开关, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)
STMICROELECTRONICS
晶闸管, 800 V, 50 mA, 50 A, 80 A, TO-268, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 7340 μohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.00734 ohm, 20 V, 4 V
(EN)
THAT CORPORATION
双极晶体管阵列, 低噪, PNP, -40 V, -20 mA, 75 hFE, SOIC
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 4.4 A, 30 V, 70 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 31 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 4.5 V, 1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 150 A, 40 V, 0.0034 ohm, 10 V, 3 V
(EN)
ROHM
晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
(EN)
INFINEON
单晶体管, IGBT, 标准速度, N通道, 57 A, 1.75 V, 200 W, 1.2 kV, TO-247AD, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 46 A, 650 V, 0.069 ohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 引脚
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 64 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.65 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00121 ohm, 10 V, 2 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2.5 A, 30 V, 0.065 ohm, 4.5 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
(EN)
ROHM
单晶体管 双极, PNP, -120 V, 140 MHz, 200 mW, -50 mA, 180 hFE
(EN)MULTICOMP
单晶体管 双极, NPN, 45 V, 500 mW, 1 A, 250 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.056 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -40 V, 0.021 ohm, -10 V, -1.2 V
(EN)
