产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, 开关, PNP, -40 V, 200 MHz, 200 mW, -600 mA, 100 hFE
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 55 A, 1.65 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 2600 μohm, 10 V, 1.2 V
(EN)
NEXPERIA
双极晶体管阵列, 双PNP, -45 V, 200 mW, -100 mA, 200 hFE, SOT-363
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 900 mV
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.027 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 30 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 82 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 2.3 A, -30 V, 250 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 55 V, 14 mohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 40 V, 0.0346 ohm, 10 V, 2.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 29 A, 650 V, 0.12 ohm, 18 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8.1 A, 30 V, 0.014 ohm, 4.5 V, 1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.022 ohm, 10 V, 3 V
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 40 A, 1.6 V, 144 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.2 A, -60 V, 170 mohm, -10 V, -1.6 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
(EN)
