产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ROHM
双路场效应管, MOSFET, N和P沟道, 5.5 A, 20 V, 0.03 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0019 ohm, 10 V, 1.4 V
(EN)ROHM
晶体管 双极预偏置/数字, 单路PNP, 50 V, -100 mA, 10 kohm, 10 kohm
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
(EN)
ROHM
单晶体管, IGBT, 场截止沟道, 48 A, 1.65 V, 174 W, 650 V, TO-247N, 3 引脚
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.6 V, 234 W, 650 V, TO-247N, 3 引脚
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -30 V, 0.032 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 2 A, 45 V, 0.13 ohm, 4.5 V, 1.5 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 600 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V
ROHM
双极晶体管阵列, NPN, 50 V, 300 mW, 150 mA, 120 hFE, SC-74
(EN)
ROHM
晶体管, MOSFET, N沟道, 300 mA, 30 V, 0.8 ohm, 10 V, 2.5 V
(EN)
INFINEON
单晶体管, IGBT, 4 A, 2.1 V, 75 W, 600 V, TO-252, 3 引脚
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 80 A, 650 V, 0.038 ohm, 10 V, 5 V
(EN)
DIODES INC.
单晶体管 双极, PNP, -300 V, 50 MHz, 200 mW, -100 mA, 40 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00166 ohm, 10 V, 3 V
(EN)ROHM
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
(EN)VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0072 ohm, -4.5 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.2 A, 40 V, 6.7 mohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 18 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 54 A, 650 V, 0.033 ohm, 10 V, 5 V
(EN)
