产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 0.12 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 1.6 A, 45 V, 0.14 ohm, 4.5 V, 1.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.8 ohm, 2.5 V, 1 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.216 ohm, 4.5 V, 1.3 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 30 V, 240 MHz, 900 mW, 1.5 A, 270 hFE
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V
(EN)
INFINEON
单晶体管, IGBT, 75 A, 2.35 V, 390 W, 600 V, TO-247AD, 3 引脚
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 40 V, 13 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 100 V, 0.0125 ohm, 5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 500 mW, 1 A, 100 hFE
(EN)
DIODES INC.
单晶体管 双极, 高增益, NPN, 40 V, 190 MHz, 350 mW, 4 A, 450 hFE
(EN)
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -60 V, 200 MHz, 625 mW, -600 mA, 200 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 500 V, 2.7 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14.5 A, -30 V, 0.0065 ohm, -10 V, -1.9 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -15 A, -100 V, 0.085 ohm, -10 V, -2.5 V
(EN)DIODES INC.
单晶体管 双极, NPN, 80 V, 130 MHz, 1.6 W, 6 A, 200 hFE
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)NEXPERIA
单晶体管 双极, NPN, 20 V, 300 mW, 1 A, 470 hFE
(EN)
THAT CORPORATION
双极晶体管阵列, 低噪, NPN, 40 V, 20 mA, 100 hFE, SOIC
(EN)ROHM
单晶体管 双极, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE
(EN)
