产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
VISHAY
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00078 ohm, 10 V, 2.2 V
(EN)
ROHM
单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 600 mA, 100 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 57.7 A, 650 V, 0.067 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, NPN, 100 V, 25 MHz, 20 W, 2 A, 200 hFE
(EN)
ROHM
晶体管, MOSFET, P沟道, -14 A, -60 V, 0.06 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 54 A, 30 V, 9.5 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 33 mohm, -4.5 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -550 mV
(EN)ROHM
晶体管, MOSFET, N沟道, 3 A, 200 V, 0.62 ohm, 10 V, 5.2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -2 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 14 A, 1.2 kV, 0.28 ohm, 18 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -190 mA, -250 V, 7.7 ohm, -10 V, -1.5 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -30 V, 115 MHz, 600 mW, -4.2 A, 350 hFE
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 40 V, 250 MHz, 250 mW, 600 mA, 100 hFE
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.79 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 16 A, 200 V, 0.135 ohm, 10 V, 5.25 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -200 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
(EN)ROHM
晶体管, MOSFET, P沟道, -4.5 A, -45 V, 0.11 ohm, -10 V, -3 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 100 W, 12 A, 10 hFE
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.07 ohm, 10 V, 2.5 V
(EN)
