产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 300 MHz, 350 mW, 600 mA, 35 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0035 ohm, 10 V, 1.4 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 45 V, 150 MHz, 1 W, 2 A, 150 hFE
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 100 mohm, -10 V, -1 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 640 mW, 1 A, 63 hFE
(EN)NEXPERIA
单晶体管 双极, NPN, 400 V, 20 MHz, 1.35 W, 300 mA, 50 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)DIODES INC.
单晶体管 双极, PNP, 25 V, 160 MHz, 2 W, 3 A, 200 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.07 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 220 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0113 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 75 V, 0.0159 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 10 mohm, -10 V, -1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 490 mohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -45 A, -30 V, 0.0072 ohm, -10 V, -2.5 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOP
(EN)
NEXPERIA
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 22 kohm, 47 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 2 V
(EN)
ROHM
晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 47 kohm
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
ROHM
双极晶体管阵列, 双路, PNP, 50 V, 300 mW, -150 mA, 120 hFE, SOT-457
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 3.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.04 ohm, -10 V, -2.5 V
(EN)
