产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
DIODES INC.
单晶体管 双极, 达林顿, NPN, 80 V, 1 W, 500 mA, 2000 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 55 V, 6.6 mohm, 10 V, 2.3 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 19 A, -55 V, 100 mohm, -10 V, -4 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 30 mA, 500 V, 850 ohm, 0 V
ROHM
晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 22 kohm, 47 kohm, 0.47 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11.5 A, -200 V, 0.36 ohm, -10 V, -5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 800 V, 3 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 0.0195 ohm, -10 V, -3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 160 A, 40 V, 0.0036 ohm, 10 V, 2 V
(EN)
NEXPERIA
单晶体管 双极, PNP, 30 V, 200 MHz, 300 mW, 1 A, 450 hFE
(EN)
NEXPERIA
双极晶体管阵列, NPN, PNP, 40 V, 330 mW, 1 A, 450 hFE, SuperSOT
(EN)INFINEON
晶体管, MOSFET, P沟道, 10.5 A, -40 V, 15 mohm, 10 V, 3 V
(EN)
NEXPERIA
双极晶体管阵列, 双PNP, -30 V, 250 mW, -100 mA, 100 hFE, SOT-143B
(EN)
ROHM
单晶体管 双极, NPN, 30 V, 320 MHz, 500 mW, 2 A, 200 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极-射频, PNP, -60 V, 50 MHz, 1.5 W, -3 A, 12 hFE
(EN)DIODES INC.
单晶体管 双极, PNP, 40 V, 150 MHz, 350 mW, 1 A, 300 hFE
(EN)
STMICROELECTRONICS
晶闸管, 800 V, 200 μA, 800 mA, 1.25 A, SOT-223, 3 引脚
(EN)
ANALOG DEVICES
双极晶体管阵列, NPN, 40 V, 20 mA, 300 hFE, SOIC
(EN)
NEXPERIA
单晶体管 双极, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 100 hFE
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 16 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 40 V, 0.008 ohm, 10 V, 2 V
(EN)
ROHM
双极晶体管阵列, 混合式, PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88
(EN)DIODES INC.
单晶体管 双极, PNP, 400 V, 50 MHz, 2 W, 200 mA, 100 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 500 mA, 35 hFE
(EN)
