产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -500 mA, 2.2 kohm, 2.2 kohm
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 80 V, 50 MHz, 1.67 W, 10 A, 60 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 53.5 A, 650 V, 0.063 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 4.5 V, 2.5 V
(EN)
DIODES INC.
单晶体管 双极, 达林顿, NPN, 60 V, 330 mW, 300 mA, 10000 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -30 V, 0.069 ohm, -10 V, -2.1 V
(EN)
ROHM
单晶体管 双极, 高速, NPN, 32 V, 250 MHz, 200 mW, 500 mA, 120 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 500 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 80 A, 1.9 V, 349 W, 600 V, TO-247AB, 3 引脚
(EN)INFINEON
单晶体管, IGBT, 47 A, 1.65 V, 206 W, 600 V, TO-263AB, 3 引脚
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -30A, TDSON-8
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0055 ohm, 10 V, 2.25 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 100 V, 3 MHz, 20 W, 6 A, 30 hFE
(EN)DIODES INC.
双路场效应管, MOSFET, 双N沟道, 3.2 A, 60 V, 180 mohm, 10 V, 1 V
(EN)
MULTICOMP
单晶体管 双极, PNP, -45 V, 125 MHz, 500 mW, -1 A, 250 hFE
(EN)ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6.6 A, 20 V, 29 mohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, 5.2 A, -30 V, 45 mohm, -10 V, -1 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 150 V, 30 MHz, 1.5 W, 1 A, 10 hFE
(EN)
