产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37.5 A, 75 V, 0.009 ohm, 15 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
ROHM
晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -10 V, -3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00179 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -60 V, 145 MHz, 650 mW, -1 A, 100 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 75 mohm, 10 V, -1 V
(EN)
ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 190 mohm, -10 V, -1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.0637 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0115 ohm, 10 V, 2.85 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -3 V
(EN)NEXPERIA
单晶体管 双极, PNP, 30 V, 200 MHz, 300 mW, 2 A, 450 hFE
(EN)ROHM
单晶体管 双极, PNP, -50 V, 140 MHz, 200 mW, -150 mA, 120 hFE
(EN)
ROHM
单晶体管 双极, NPN, 20 V, 350 MHz, 200 mW, 500 mA, 820 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 15 V, 100 MHz, 2 W, -3 A, 500 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 4.3 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管 双极-射频, PNP, -60 V, 150 MHz, 250 mW, -100 mA, 260 hFE
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道 + 肖特基, 8.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 4 V
(EN)
