产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.43 ohm, 10 V, 3 V
(EN)
DIODES INC.
单晶体管 双极, PNP, 100 V, 150 MHz, 500 mW, -1 A, 100 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 3.8 A, 60 V, 140 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 200 MHz, 1 W, 800 mA, 1000 hFE
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -1.03 A, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
INFINEON
单晶体管, IGBT, 60 A, 1.65 V, 349 W, 1.35 kV, TO-247, 3 引脚
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
LITTELFUSE
Triac, 800 V, 30 A, TO-220AB, 35 mA, 1.3 V
(EN)
WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V
(EN)
INFINEON
单晶体管, IGBT, 48 A, 1.6 V, 250 W, 600 V, TO-263, 2 引脚
(EN)ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.55 V, 454 W, 1.2 kV, TO-247, 3 引脚
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 60 V, 0.021 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -140 V, 10 MHz, 120 W, -12 A, 35 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.8 A, 30 V, 33 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 151 A, 60 V, 0.0027 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 400 V, 10 MHz, 1.56 W, 1 A, 30 hFE
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -18.5 A, -60 V, 0.12 ohm, -5 V, -1.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 300 mV
(EN)MULTICOMP
单晶体管 双极, NPN, 80 V, 500 mW, 1 A, 250 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V
