产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, NPN, 400 V, 30 MHz, 520 mW, 500 mA, 10 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.4 A, 900 V, 1.8 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.1 ohm, 10 V, 4 V
(EN)
NEXPERIA
双极晶体管阵列, AEC-Q101, 双PNP, -100 V, 1.25 W, -3 A, 10 hFE, SOT-1205
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 0.17 ohm, 4.5 V, 1.5 V
(EN)DIODES INC.
单晶体管 双极, NPN, 40 V, 150 MHz, 1 W, 1 A, 300 hFE
(EN)NEXPERIA
单晶体管 双极, 开关, NPN, 12 V, 500 MHz, 250 mW, 100 mA, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -100 V, 0.82 ohm, -10 V, -2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 22 mohm, 10 V, 2.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 190 V, 1.8 ohm, 4.5 V, 1.5 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 60 V, 150 MHz, 600 mW, 1 A, 100 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 650 V, 0.17 ohm, 10 V, 3 V
(EN)
NXP
晶体管, 射频FET, 20 V, 20 mA, 200 mW, SOT-143B
(EN)
ROHM
单晶体管 双极, NPN, 60 V, 210 MHz, 500 mW, 1 A, 120 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.2 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 30 V, 3.8 mohm, 10 V, 2.3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -6 A, -45 V, 0.026 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 350 V, 10 MHz, 20 W, 500 mA, 5 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0023 ohm, 10 V, 2.7 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0028 ohm, 10 V, 3 V
ROHM
晶体管, MOSFET, N沟道, 500 mA, 30 V, 0.35 ohm, 10 V, 2.5 V
(EN)
ROHM
单晶体管 双极, PNP, -80 V, 280 MHz, 500 mW, -2.5 A, 120 hFE
(EN)
NEXPERIA
晶体管 双极-射频, PNP, -45 V, 80 MHz, 200 mW, -500 mA, 250 hFE
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V
(EN)
