产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
单晶体管, IGBT, 80 A, 1.55 V, 429 W, 1.2 kV, TO-247, 3 引脚
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 100 V, 0.0111 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
三端双向可控硅, 600 V, 25 mA, 1 W, 1.3 V, TO-220AB, 80 A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV
(EN)
ROHM
单晶体管 双极, PNP, -30 V, 330 MHz, 500 mW, -3 A, 200 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 40 V, 450 MHz, 150 mW, 500 mA, 200 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 125 MHz, 25 W, -3 A, 10 hFE
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶闸管, 600 V, 200 μA, 5 A, 8 A, TO-252, 3 引脚
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 100 MHz, 250 mW, -100 mA, 220 hFE
(EN)STMICROELECTRONICS
三端双向可控硅, 800 V, 35 mA, 1 W, 1.3 V, TO-220AB, 250 A
(EN)INFINEON
单晶体管, IGBT, 23 A, 1.55 V, 99 W, 600 V, TO-263, 3 引脚
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 18 mohm, 10 V, 2.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
(EN)ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 250 V, 4 MHz, 200 W, 16 A, 8 hFE
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 400 V, 0.14 ohm, 10 V, 3 V
(EN)
NEXPERIA
双极晶体管阵列, 通用, NPN, PNP, 45 V, 200 mW, 100 mA, 200 hFE, SOT-666
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 420 mW, 1 A, 40 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.058 ohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 4.5 A, 20 V, 33 mohm, 4.5 V, 800 mV
(EN)
