产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 100 hFE
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 30 mohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -80 V, 40 MHz, 1.75 W, -8 A, 40 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 61 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 半桥接, N和P沟道, 1.8 A, 60 V, 1.5 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 33 mohm, 10 V, 1.2 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 650 mW, 1 A, 100 hFE
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.045 ohm, -10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V
(EN)
ROHM
单晶体管 双极, NPN, 80 V, 280 MHz, 500 mW, 2.5 A, 120 hFE
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 80 V, 250 mW, 500 mA, 100 hFE
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 130 MHz, 600 mW, 6.2 A, 500 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3.6 A, 80 V, 73 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 9 V, SOT-23, JFET
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
(EN)
