产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 100 kohm, 100 kohm, 1 电阻比率
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 250 MHz, 265 mW, 600 mA, 20 hFE
(EN)ON SEMICONDUCTOR
单晶体管 双极, NPN, 65 V, 100 MHz, 265 mW, 100 mA, 200 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -100 mA, -30 V, 8 ohm, -4 V, -1.4 mV
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 20 A, -30 V, 0.0038 ohm, -10 V, 1.8 V
(EN)
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 10 kohm, 10 kohm
(EN)ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 45 V, 380 mW, 100 mA, 200 hFE, SOT-363
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 260 mA, 60 V, 1 ohm, 10 V, 2.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8 A, 60 V, 20 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -281 mA, -20 V, 0.9 ohm, -4.5 V, -1 V
(EN)ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9 A, 40 V, 0.019 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
MULTICOMP
单晶体管 双极, NPN, 45 V, 200 MHz, 350 mW, 100 mA, 290 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 100 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -12 V, 625 mW, -1 A, 80 hFE
(EN)ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 340 mA, 50 V, 1 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)
