产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
DIODES INC.
单晶体管 双极, PNP, 25 V, 100 MHz, 2 W, 3 A, 300 hFE
(EN)MULTICOMP
单晶体管 双极, PNP, -80 V, 125 MHz, 500 mW, -1 A, 250 hFE
(EN)
ROHM
晶体管 双极预偏置/数字, PNP, 单路PNP, -50 V, -100 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.0178 ohm, 10 V, 1.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 68.5 A, 700 V, 0.037 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 40 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.5 A, 30 V, 0.033 ohm, 4.5 V, 650 mV
(EN)
ROHM
晶体管 双极预偏置/数字, NPN, 双路 NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 700 mA, 60 V, 2 ohm, 10 V, 2.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 22 kohm
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
(EN)
ROHM
单晶体管 双极, NPN, 30 V, 280 MHz, 500 mW, 3 A, 200 hFE
(EN)LITTELFUSE
单晶体管, IGBT, 20 A, 1.5 V, 165 W, 365 V, TO-263, 3 引脚
(EN)
NEXPERIA
单晶体管 双极, 开关, NPN, 40 V, 300 MHz, 500 mW, 600 mA, 100 hFE
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 480 mA, -240 V, 11 ohm, -10 V, -1.4 V
(EN)NEXPERIA
单晶体管 双极, 达林顿, NPN, 60 V, 220 MHz, 1.3 W, 500 mA, 10000 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 23 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)DIODES INC.
单晶体管 双极, PNP, 25 V, 135 MHz, 2.5 W, 4 A, 450 hFE
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.052 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.027 ohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 5 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.9 A, 20 V, 0.023 ohm, 4.5 V, 400 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0039 ohm, 10 V, 2 V
(EN)
