产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 2 V
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 10 kohm
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 38 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 1.6 W, 500 mA, 25 hFE
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.117 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 400 V, 30 MHz, 300 mW, 500 mA, 200 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.014 ohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
(EN)
BROADCOM LIMITED
晶体管, 射频FET, 高线性度, 5.5 V, 305 mA, 600 mW, 450 MHz, 10 GHz, SOT-343
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.032 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 4 V
(EN)NEXPERIA
单晶体管 双极, NPN, 50 V, 100 MHz, 300 mW, 3 A, 300 hFE
(EN)ROHM
晶体管 双极预偏置/数字, NPN, 单路NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 40 V, 3100 μohm, 10 V, 1 V
(EN)
ROHM
晶体管 双极预偏置/数字, 数字式, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -28 A, -30 V, 0.0052 ohm, -10 V, -1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
(EN)
NEXPERIA
单晶体管 双极, NPN, 45 V, 180 MHz, 1.65 W, 1 A, 100 hFE
(EN)
DIODES INC.
单晶体管 双极, NPN, 45 V, 300 MHz, 200 mW, 100 mA, 290 hFE
(EN)
ROHM
双极晶体管阵列, 双路, NPN, PNP, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -5.9 A, -100 V, 150 mohm, -10 V, -4 V
(EN)
