DIODES INC.
晶体管, MOSFET, P沟道, -35 A, -40 V, 0.007 ohm, -10 V, -2 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV
INFINEON
晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, 100 mA, 22 kohm, 47 kohm, 0.47 电阻比率
INFINEON
功率场效应管, MOSFET, N沟道, 24.3 A, 650 V, 0.14 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0017 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -100 V, 2 W, -5 A, 1000 hFE
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 94 A, 30 V, 0.0047 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
NEXPERIA
单晶体管 双极, NPN, 80 V, 180 MHz, 500 mW, 1 A, 63 hFE
DIODES INC.
单晶体管 双极, PNP, -500 V, 60 MHz, 2 W, 50 mA, 100 hFE
ON SEMICONDUCTOR
晶闸管, 10 V, 1.3 A, 1 A, 457-04, 2 引脚
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
INFINEON
功率场效应管, MOSFET, N沟道, 20.2 A, 600 V, 0.17 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 280 A, 40 V, 0.0018 ohm, 10 V, 4 V
ROHM
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.018 ohm, 10 V, 3 V
ROHM
单晶体管 双极, NPN, 80 V, 300 MHz, 500 mW, 1.5 A, 120 hFE
VISHAY
晶体管, MOSFET, N沟道, 36 A, 500 V, 0.105 ohm, 10 V, 3 V
DIODES INC.
单晶体管 双极, NPN, 25 V, 220 MHz, 1 W, 5 A, 250 hFE
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.1 A, 40 V, 0.02 ohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -100 V, 60 W, -8 A, 750 hFE
INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0155 ohm, 10 V, 2.7 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -150 V, 300 MHz, 350 mW, -500 mA, 50 hFE
DIODES INC.
晶体管, MOSFET, P沟道, 10.4 A, -60 V, 55 mohm, -10 V, -1 V