产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 150 mA, -20 V, 8 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 400 V, 2 W, 8 A, 200 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 4.7 kohm
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 0.115 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 0.022 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.00425 ohm, 10 V, 1.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 90 A, 100 V, 6.7 mohm, 10 V, 2.5 V
(EN)
DIODES INC.
单晶体管 双极, NPN, 20 V, 150 MHz, 2 W, 3 A, 500 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V
(EN)NEXPERIA
单晶体管 双极, 双PNP, -45 V, 200 MHz, 1.25 W, -1 A, 1000 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V
(EN)INFINEON
单晶体管, IGBT, 16 A, 1.7 V, 77 W, 600 V, TO-252AA, 3 引脚
(EN)
NEXPERIA
晶体管 双极-射频, PNP, -30 V, 100 MHz, 200 mW, -100 mA, 800 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 210 A, 55 V, 0.0026 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 250 V, 0.0175 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.4 A, -60 V, 0.1 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 320 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
单晶体管 双极, NPN, 36 V, 130 mA
(EN)
NEXPERIA
单晶体管 双极, PNP, -40 V, 80 MHz, 1.5 W, -15 A, 30 hFE
(EN)
INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -2 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 40 hFE
(EN)
