产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
NEXPERIA
双极晶体管阵列, PNP, 45 V, 200 mW, -100 mA, 290 hFE, SOT-666
(EN)
NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 1.65 W, 1 A, 100 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -30 V, 5 mA, 15 mA, -6 V, SOT-23, RF FET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 560 V, 1.25 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.08 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 69 A, 100 V, 0.0116 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 6 mohm, 10 V, 1.15 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00105 ohm, 10 V, 1.46 V
(EN)
NEXPERIA
单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 双路 PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.036 ohm, 5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 3.7 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 22 kohm, 22 kohm
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3 A, -20 V, 66 mohm, -4.5 V, -900 mV
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 100 MHz, 700 mW, -4.1 A, 300 hFE
(EN)ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.038 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 19.8 A, 20 V, 0.0038 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -80 A, -60 V, 0.021 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.08 ohm, -4.5 V, -450 mV
(EN)NEXPERIA
单晶体管 双极, 通用, NPN, 45 V, 250 mW, 100 mA, 90 hFE
(EN)
