产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 69 A, 55 V, 0.011 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0026 ohm, 10 V, 2.7 V
VISHAY
双路场效应管, MOSFET, N和P沟道, 7.6 A, 12 V, 0.014 ohm, 4.5 V, 1.5 V
(EN)
NEXPERIA
双极晶体管阵列, 通用, NPN, PNP, 50 V, 180 mW, 150 mA, 250 hFE, SOT-363
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0015 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 60 mohm, 10 V, 5.5 V
(EN)NEXPERIA
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 10 kohm
(EN)
ROHM
单晶体管 双极, AEC-Q101, NPN, 30 V, 250 MHz, 2 W, 5 A, 200 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.00944 ohm, 10 V, 3 V
(EN)
LITTELFUSE
Thyristor, 800 V, 20 mA, 7.8 A, 12 A, TO-252, 3 Pins
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 4.7 kohm, 4.7 kohm
(EN)
NEXPERIA
晶体管 双极-射频, NPN, 50 V, 180 MHz, 200 mW, 500 mA, 340 hFE
(EN)
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, 50 V, -100 mA, 100 kohm, 100 kohm
(EN)
NEXPERIA
双极晶体管阵列, 通用, NPN, 15 V, 200 mW, 500 mA, 200 hFE, SOT-666
(EN)
NEXPERIA
晶体管 双极-射频, PNP, -45 V, 100 MHz, 200 mW, -100 mA, 800 hFE
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V
(EN)LITTELFUSE
晶闸管, 800 V, 30 mA, 16 A, 25 A, TO-220AB, 3 引脚
(EN)
ROHM
单晶体管 双极, 高速, NPN, 12 V, 320 MHz, 150 mW, 500 mA, 270 hFE
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 75 V, 12.5 mohm, 10 V, 2.3 V
(EN)DIODES INC.
单晶体管 双极, NPN, 300 V, 75 MHz, 500 mW, 500 mA, 100 hFE
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.2 A, 150 V, 0.31 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.019 ohm, 10 V, 1.5 V
(EN)
