产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
RENESAS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.173 ohm, 4.5 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 30 V, 100 MHz, 710 mW, 1 A, 200 hFE
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 56 A, 100 V, 0.014 ohm, 10 V, 1.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V
(EN)
ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 150 mW, 150 mA, 180 hFE
(EN)
NEXPERIA
双极晶体管阵列, BISS 负载开关, NPN, PNP, 40 V, 200 mW, -500 mA, 200 hFE, SOT-363
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17.5 A, 60 V, 14 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -65 V, 150 MHz, 310 mW, -100 mA, 420 hFE
(EN)
DIODES INC.
双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
(EN)
VISHAY
晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V
(EN)ROHM
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -40 V, 900 μA, 4.5 mA, -4 V, SOT-23, JFET
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.5 A, 20 V, 0.036 ohm, 4.5 V, 850 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 100 V, 28.5 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, AEC-Q101, PNP, -300 V, 10 MHz, 15 W, -500 mA, 30 hFE
(EN)DIODES INC.
单晶体管 双极, NPN, 150 V, 100 MHz, 500 mW, 1 A, 100 hFE
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 340 mohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -29.7 A, -20 V, 0.012 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0076 ohm, -10 V, -1.5 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 1 V
(EN)
