产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
INFINEON
晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.102 ohm, -10 V, -2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.9 A, 60 V, 0.09 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.5 A, 30 V, 10 mohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.162 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.055 ohm, -4.5 V, -650 mV
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.05 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 30 V, 0.005 ohm, 10 V, 1.83 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3.1 A, -20 V, 0.06 ohm, -1 V, 1 V
(EN)
ROHM
晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V
(EN)DIODES INC.
单晶体管 双极, NPN, 60 V, 150 MHz, 500 mW, 1 A, 300 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 32 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
单晶体管 双极, PNP, -12 V, 100 MHz, 650 mW, -1 A, 90 hFE
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 100 V, 38 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 400 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, PNP, -25 V, 100 MHz, 2 W, -3 A, 15 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0023 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.06 ohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, -35 V, 5 mA, 15 mA, -6 V, SOT-23, RF FET
(EN)
DIODES INC.
单晶体管 双极, PNP, -40 V, 150 MHz, 1 W, -1 A, 160 hFE
(EN)
