产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 30 V, 50 MHz, 350 mW, 100 mA, 300 hFE
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 45 V, 125 MHz, 350 mW, 200 mA, 250 hFE
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 100 V, 38.6 mohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 115 mA, 60 V, 7.5 ohm, 10 V, 1 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 200 mW, -100 mA, 220 hFE
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 12 V, 0.057 ohm, 4.5 V, 600 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.33 ohm, -4.5 V, -700 mV
(EN)INFINEON
晶体管 双极-射频, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, 70 hFE
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, 5 V, -2 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 300 mA, 30 V, 0.8 ohm, 4.5 V, 1.5 V
(EN)ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 1 kohm, 10 kohm, 0.1 电阻比率
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 40 V, 30 μA, 90 μA, 1.8 V, SOT-23, JFET
(EN)ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, 40 V, 250 MHz, 150 mW, 200 mA, 250 hFE
(EN)
ON SEMICONDUCTOR
双极晶体管阵列, NPN, PNP, 50 V, 380 mW, 200 mA, 200 hFE, SC-74
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 60 V, 0.036 ohm, 10 V, 2.4 V
(EN)
NEXPERIA
单晶体管 双极, 通用, PNP, 65 V, 250 mW, 100 mA, 125 hFE
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
(EN)NEXPERIA
单晶体管 双极, NPN, 100 V, 300 mW, 1 A, 150 hFE
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR
单晶体管 双极, PNP, -60 V, 50 MHz, 225 mW, -500 mA, 100 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.006 ohm, 10 V, 3 V
(EN)
