产品分类：半导体 - 分立器件,规格：MSL MSL 1 -无限制,
ON SEMICONDUCTOR
单晶体管 双极, PNP, -80 V, 40 MHz, 2 W, -10 A, 40 hFE
(EN)
NEXPERIA
单晶体管 双极, PNP, -100 V, 125 MHz, 25 W, -2 A, 20 hFE
(EN)
ON SEMICONDUCTOR
单晶体管 双极, NPN, 160 V, 225 mW, 600 mA, 30 hFE
(EN)
DIODES INC.
单晶体管 双极, 达林顿, PNP, 120 V, 160 MHz, 2 W, -2 A, 3000 hFE
(EN)
DIODES INC.
单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 330 hFE
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -80 V, 0.216 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18.4 A, 100 V, 0.0073 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 46 A, 200 V, 0.055 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 500 mA, 2.2 kohm, 10 kohm, 0.22 电阻比率
(EN)
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, FS沟槽, 10 A, 2.9 V, 69 W, 1.2 kV, TO-252, 3 引脚
(EN)
INFINEON
单晶体管, IGBT, 10 A, 2.05 V, 110 W, 600 V, TO-263, 3 引脚
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 700 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 8230 μohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)NEXPERIA
单晶体管 双极, PNP, -20 V, 85 MHz, 770 mW, -6.6 A, 400 hFE
(EN)NEXPERIA
双极晶体管阵列, AEC-Q101, 双NPN, 100 V, 1.25 W, 3 A, 10 hFE, SOT-1205
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 3.1 A, 1 kV, 5 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 4.2 A, 20 V, 0.09 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
单晶体管 双极, PNP, -150 V, 115 MHz, 520 mW, -1 A, 220 hFE
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V
(EN)DIODES INC.
双路场效应管, MOSFET, 双P沟道, -6.9 A, -30 V, 0.045 ohm, -10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00493 ohm, 10 V, 1.8 V
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
(EN)
